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| RH1056A Precision, High Speed, JFET Input Operational Amplifier DESCRIPTIO ABSOLUTE AXI U RATI GS The RH1056A JFET input operational amplifiers combine precision specifications with high speed performance. For the first time, 16V/s slew rate and 6.5MHz gainbandwidth product are simultaneously achieved with offset voltage of typically 50V, 1.2V/C drift, bias currents of 40pA at 70C. The wafer lots are processed to LTC's in-house Class S flow to yield circuits usable in stringent military applications. Supply Voltage ..................................................... 20V Differential Input Voltage ...................................... 40V Input Voltage ......................................................... 20V Output Short-Circuit Duration ......................... Indefinite Operating Temperature Range ............. - 55C to 125C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec)................. 300C PACKAGE/ORDER I FOR ATIO TOP VIEW NC 8 BAL 1 -IN 2 +IN 3 - + TOP VIEW 7 V+ 6 OUT 5 BAL NC BAL -IN +IN V- 1 2 3 4 5 10 9 8 7 6 4 V- H PACKAGE 8-LEAD TO-5 METAL CAN W PACKAGE 10-LEAD CERPAC BUR -I CIRCUIT 10k 20V 200 10k + 3 - 2 7 6 4 -20V RH1056A BI U WW W U W U U NC NC V+ OUT BAL UU 1 RH1056A TOTAL DOSE BIAS CIRCUIT 10k 15V 0.1F 8V TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL VOS IOS IB RIN AVOL VO VCM CMRR PSRR IS SR GBW en in CIN PARAMETER Input Offset Voltage Input Offset Current Input Bias Current Input Resistance Large-Signal Voltage Gain Output Voltage Swing Input Common Mode Voltage Range Common Mode Rejection Ratio Power Supply Rejection Ratio Supply Current Slew Rate Gain-Bandwidth Product Input Noise Voltage Density VS = 15V, VO = 10V, RL = 2k VS = 15V, VO = 10V, RL = 1k VS = 15V, RL = 2k VS = 15V VCM = 11V VCM = 10.5V VS = 10V to 18V VS = 10V to 17V VS = 15V AV = 1, VS = 15V VS = 15V VS = 15V, f = 10Hz VS = 15V, f = 1kHz 12 150 130 12 11 86 90 Fully Warmed Up TA = 125C Fully Warmed Up TA = 125C CONDITIONS NOTES MIN 1 3 3 3 Input Noise Current Density VS = 15V, f = 10Hz VS = 15V, f = 1kHz Input Capacitance 2 + 10k 3 - 2 7 6 4 0.1F -15V RH1056A BC (Preirradiation) (Note 2) TA = 25C SUB- - 55C TA 125C SUBTYP MAX GROUP MIN TYP MAX GROUP 300 10 50 1012 4 4 4 1 1 85 1 88 6.5 6.5 28 14 1.8 1.8 4 4 1 7 2,3 2,3 40 12 11 5,6 5,6 2,3 4 1 1.5 1 3.0 2 2 700 2, 3 UNITS V pA nA pA nA V/mV V/mV V V dB dB dB dB mA V/s MHz nV/Hz nV/Hz fA/Hz fA/Hz pF RH1056A TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VOS IOS IB AVOL VO VCM CMRR PSRR IS SR CIN Input Offset Voltage Input Offset Current Input Bias Current Large-Signal Voltage Gain VO = 10V, RL 2k VO = 10V, RL 1k CONDITIONS 1 3 3 150 130 12 11 86 90 7 AV = 1, VS = 15V 12 3(Typ) 12 3(Typ) 300 10 50 150 130 12 11 86 90 7 12 3(Typ) (Postirradiation) (Note 4) 10KRAD(Si) 25KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 300 50 250 150 130 12 11 86 90 7 12 3(Typ) 370 150 500 100 87 12 11 86 90 7 12 3(Typ) 570 250 1000 75 65 12 11 86 90 7 570 350 2000 V pA pA V/mV V/mV V V dB dB mA V/s pF Output Voltage Swing RL 2k Input Common Mode VS = 15V Voltage Range Common Mode Rejection Ratio Power Supply Rejection Ratio Supply Current Slew Rate Input Capacitance VCM = 11V VS = 10V to 18V Note 1: Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage. Offset voltage is measured under two different conditions: (a) approximately 0.5 seconds after application of power, (b) at TA = 25C only, with the chip heated to approximately 45C to account for chip temperature rise when the device is fully warmed up. Note 2: Unless otherwise stated, VS = 15V; and VOS, IB and IOS are measured at VCM = 0V. Note 3: The input bias currents are junction leakage currents which approximately double for every 10C increase in the junction temperature, TJ. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. TJ = TA + (JA * PD) where JA is the thermal resistance from junction to ambient. Note 4: Unless otherwise stated, VS = 15V, VCM = 0V and TA = 25C. TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) Group A Test Requirements (Method 5005) Group B and D for Class S, and Class C and D for Class B End Point Electrical Parameters (Method 5005) * PDA applies to subgroup 1. See PDA Test Notes. SUBGROUP 1*,2,3,4,5,6,7 1,2,3,4,5,6,7 1 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. UW 3 RH1056A TYPICAL PERFORMANCE CHARACTERISTICS Input Offset Voltage 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 VS = 15V VCM= 0V OPEN-LOOP GAIN (V/mV) 350 300 250 RL = 1k 200 150 100 50 0 1 10 100 TOTAL DOSE KRADs (Si) 1000 1056A G01 INPUT OFFSET VOLTAGE (mV) Input Bias Current 3.0 2.5 INPUT BIAS CURRENT (nA) 2.0 1.5 1.0 0.5 0 -0.5 1 10 100 TOTAL DOSE KRADs (Si) 1000 1056A G03 COMMON MODE REJECTION RATIO (dB) VS = 15V VCM = 0V Input Offset Current 0.4 0.3 INPUT OFFSET CURRENT (nA) 0.2 0.1 0 -0.1 -0.2 -0.3 1 10 100 TOTAL DOSE KRADs (Si) 1000 1056A G05 POWER SUPPLY REJECTION RATIO (dB) VS = 15V VCM = 0V 4 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900 q FAX: (408) 434-0507 q www.linear-tech.com UW Open-Loop Gain VS = 15V VO = 10V RL = 2k 1 10 100 TOTAL DOSE KRADs (Si) 1000 1056A G02 Common Mode Rejection Ratio 130 120 110 100 90 80 70 60 1 10 100 TOTAL DOSE KRADs (Si) 1000 1056A G04 VS = 15V VCM = 11V Power Supply Rejection Ratio 130 VS = 10V TO 18V 120 110 100 90 80 70 60 1 10 100 TOTAL DOSE KRADs (Si) 1000 1056A G06 I.D. No. 66-10-0160 Rev. A 0698 LT/HP 0698 200 REV A * PRINTED IN USA (c) LINEAR TECHNOLOGY CORPORATION 1989 |
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